CSD25485F5, MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Описание
P-канал 20V 3,2A (Ta) 500 мВт (Ta) поверхностный монтаж 3-PICOSTAR
Технические параметры
| Base Product Number | CSD25485 -> |
| Current - Continuous Drain (Id) @ 25В°C | 3.2A (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 4.5V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 533pF @ 10V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 3-SMD, No Lead |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 900mA, 8V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | FemtoFETв„ў -> |
| Supplier Device Package | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -12V |
| Vgs(th) (Max) @ Id | 1.3V @ 250ВµA |
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 14 ns |
| Forward Transconductance - Min | 7 S |
| Height | 0.35 mm |
| Id - Continuous Drain Current | -3.2 A |
| Length | 1.53 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 1.4 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 3.5 nC |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Rise Time | 6 ns |
| RoHS | Details |
| Tradename | PicoStar |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time | 14 ns |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vgs - Gate-Source Voltage | -12 V |
| Vgs th - Gate-Source Threshold Voltage | -1.3 V |
| Width | 0.77 mm |
| Automotive | No |
| Channel Type | P |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 5.3 |
| Maximum Drain Source Resistance (mOhm) | 35@8V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 25 |
| Maximum Gate Source Voltage (V) | -12 |
| Maximum Gate Threshold Voltage (V) | 1.3 |
| Maximum IDSS (uA) | 0.1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | FemtoFET |
| Supplier Package | PicoStar |
| Typical Fall Time (ns) | 14 |
| Typical Gate Charge @ Vgs (nC) | 2.7@4.5V |
| Typical Gate Threshold Voltage (V) | 0.95 |
| Typical Gate to Drain Charge (nC) | 0.56 |
| Typical Input Capacitance @ Vds (pF) | 410@10V |
| Typical Rise Time (ns) | 6 |
| Typical Turn-Off Delay Time (ns) | 27 |
| Typical Turn-On Delay Time (ns) | 14 |
| Вес, г | 92 |
Техническая документация
Datasheet CSD25485F5
pdf, 1197 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
