Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Nexperia › BUK9M53-60EX, MOSFET BUK9M53-60E/ SOT1210/mLFPAK

BUK9M53-60EX, MOSFET BUK9M53-60E/ SOT1210/mLFPAK

Изображения служат только для ознакомления,
см. техническую документацию

4845 шт., срок 6-8 недель

170 руб.

от 10 шт. — 150 руб.

от 100 шт. — 96 руб.

от 500 шт. — 77.79 руб.

Добавить в корзину 1 шт. на сумму 170 руб.

Номенклатурный номер: 8005510544

Артикул: BUK9M53-60EX

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Automotive MOSFETs
Nexperia Automotive MOSFETs comprise a range of AEC-Q101-qualified devices that meet the stringent standards set by the automotive industry. These Nexperia automotive devices are designed for an operating environment far more hostile than power MOSFETs used in home and portable applications and are suitable for thermally demanding environments due to a +175°C rating.

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1500
Fall Time:	6.5 ns
Id - Continuous Drain Current:	17 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	LFPAK-33-8
Part # Aliases:	934070057115
Pd - Power Dissipation:	36 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	6 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	43 mOhms
Rise Time:	7.6 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	9.9 ns
Typical Turn-On Delay Time:	5.6 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Resistance	120 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	10 V
Maximum Gate Threshold Voltage	2.45V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	36 W
Minimum Gate Threshold Voltage	0.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	LFPAK33
Pin Count	4
Transistor Configuration	Single
Typical Gate Charge @ Vgs	6 nC @ 10 V
Width	2.6mm
Вес, кг	29.2