ALD1106PBL

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360 шт., срок 7-9 недель

1 910 руб.

от 50 шт. — 1 330 руб.

от 100 шт. — 1 140 руб.

Добавить в корзину 1 шт. на сумму 1 910 руб.

Номенклатурный номер: 8005731614

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Arrays

Mosfet Array 4 N-Channel, согласованная пара 10,6 В, 500 мВт, сквозное отверстие 14-PDIP

California Prop 65	Warning Information
Drain to Source Voltage (Vdss)	10.6V
ECCN	EAR99
FET Feature	Standard
FET Type	4 N-Channel, Matched Pair
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	3pF @ 5V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	0В°C ~ 70В°C (TJ)
Package	Tube
Package / Case	14-DIP (0.300"", 7.62mm)
Power - Max	500mW
Rds On (Max) @ Id, Vgs	500Ohm @ 5V
RoHS Status	ROHS3 Compliant
Supplier Device Package	14-PDIP
Vgs(th) (Max) @ Id	1V @ 1ВµA
Brand:	Advanced Linear Devices
Channel Mode:	Enhancement
Configuration:	Quad
Factory Pack Quantity: Factory Pack Quantity:	50
Id - Continuous Drain Current:	4.8 mA
Manufacturer:	Advanced Linear Devices
Maximum Operating Temperature:	+70 C
Minimum Operating Temperature:	0 C
Mounting Style:	Through Hole
Number of Channels:	4 Channel
Package / Case:	PDIP-14
Packaging:	Tube
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	350 Ohms
Series:	ALD1106P
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	4 N-Channel
Type:	MOSFET
Vds - Drain-Source Breakdown Voltage:	12 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Вес, г	8