CSD19536KTTT

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1 770 руб.

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Номенклатурный номер: 8005745151

N-Channel NexFET ™ Power MOSFET, Texas Instruments

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	150
Fall Time:	6 ns
Forward Transconductance - Min:	329 S
Id - Continuous Drain Current:	272 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Pd - Power Dissipation:	375 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	118 nC
Rds On - Drain-Source Resistance:	2.4 mOhms
Rise Time:	8 ns
Series:	CSD19536KTT
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.1V
Maximum Continuous Drain Current	272 A
Maximum Drain Source Resistance	2.8 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	375 W
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	NexFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	118 nC @ 0 V
Width	9.65mm