2N3792 PBFREE

Изображения служат только для ознакомления,
см. техническую документацию

152 шт., срок 6-8 недель

1 760 руб.

от 20 шт. — 1 420 руб.

от 100 шт. — 1 110 руб.

Добавить в корзину 1 шт. на сумму 1 760 руб.

Номенклатурный номер: 8005752480

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор PNP 80V 10A 4MHz 150W Through Hole TO-3

Current - Collector (Ic) (Max)	10A
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 1A, 2V
ECCN	EAR99
Frequency - Transition	4MHz
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Tube
Package / Case	TO-204AA, TO-3
Power - Max	150W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)	80V
Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	1 V
Configuration:	Single
Continuous Collector Current:	10 A
DC Collector/Base Gain hfe Min:	50
DC Current Gain hFE Max:	180
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	20
Gain Bandwidth Product fT:	4 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	10 A
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-3
Packaging:	Tube
Pd - Power Dissipation:	150 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	PNP