APT65GP60B2G

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5 150 руб.

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Номенклатурный номер: 8005776426

Discrete Semiconductor Products\Transistors - IGBTs - Single

IGBT PT 600V 100A 833W Through Hole

Base Product Number	APT65GP60 ->
Current - Collector (Ic) (Max)	100A
Current - Collector Pulsed (Icm)	250A
ECCN	EAR99
Gate Charge	210nC
HTSUS	8541.29.0095
IGBT Type	PT
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3 Variant
Power - Max	833W
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Series	POWER MOS 7В® ->
Switching Energy	605ВµJ (on), 896ВµJ (off)
Td (on/off) @ 25В°C	30ns/91ns
Test Condition	400V, 65A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 65A
Voltage - Collector Emitter Breakdown (Max)	600V
Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.2 V
Configuration:	Single
Continuous Collector Current at 25 C:	100 A
Factory Pack Quantity: Factory Pack Quantity:	1
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	833 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si