AFIC901N-135MHZ
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Описание
AFIC901N RF Reference Circuits
NXP Semiconductors AFIC901N RF Reference Circuits enable rapid evaluation and prototyping of the NXP AFIC901N RF LDMOS Power Amplifier. The AFIC901NT1 is a 2-stage, high gain amplifier designed to provide optimal performance at any frequency in the 1.8MHz to 1000MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre-driver and driver in a wide range of industrial, medical, and communications applications.
NXP Semiconductors AFIC901N RF Reference Circuits enable rapid evaluation and prototyping of the NXP AFIC901N RF LDMOS Power Amplifier. The AFIC901NT1 is a 2-stage, high gain amplifier designed to provide optimal performance at any frequency in the 1.8MHz to 1000MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre-driver and driver in a wide range of industrial, medical, and communications applications.
Технические параметры
| Brand: | NXP Semiconductors |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Frequency: | 135 MHz |
| Manufacturer: | NXP |
| Operating Supply Voltage: | 7.5 V |
| Part # Aliases: | 935345446598 |
| Product Category: | Sub-GHz Development Tools |
| Product Type: | Sub-GHz Development Tools |
| Product: | Reference Design Boards |
| Protocol - Sub GHz: | Sub GHz |
| Series: | AFIC901N |
| Subcategory: | Development Tools |
| Tool Is For Evaluation Of: | AFIC901N |
Техническая документация
Datasheet
pdf, 1133 КБ
