2N2484 PBFREE, Bipolar Transistors - BJT NPN Low Lvl SS

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4873 шт., срок 6-8 недель

460 руб.

от 10 шт. — 370 руб.

от 100 шт. — 287 руб.

от 500 шт. — 240.95 руб.

Добавить в корзину 1 шт. на сумму 460 руб.

Номенклатурный номер: 8005049482

Артикул: 2N2484 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 60V 50mA 60MHz 360mW Through Hole TO-18

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	350 mV
Configuration:	Single
Continuous Collector Current:	50 mA
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	500
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	60 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	50 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-18-3
Packaging:	Bulk
Pd - Power Dissipation:	360 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	50mA
Current - Collector Cutoff (Max)	2nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10ВµA, 5V
ECCN	EAR99
Frequency - Transition	60MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max	360mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350mV @ 100ВµA, 1mA
Voltage - Collector Emitter Breakdown (Max)	60V
Вес, г	0.35