ZXMN3F30FHTA
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Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
Описание Транзистор N-MOSFET, полевой, 30В, 3,7А, 0,95Вт, SOT23 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 3.8A (Ta) |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 318pF @ 15V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power Dissipation (Max) | 950mW (Ta) |
Rds On (Max) @ Id, Vgs | 47mOhm @ 3.2A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-23-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 3V @ 250ВµA |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 3.8 |
Maximum Drain Source Resistance (mOhm) | 47 10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 1400 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | TMOS |
Product Category | Power MOSFET |
Standard Package Name | SOT-23 |
Supplier Package | SOT-23 |
Typical Fall Time (ns) | 9.3 |
Typical Gate Charge @ 10V (nC) | 7.7 |
Typical Gate Charge @ Vgs (nC) | 7.7 10V |
Typical Input Capacitance @ Vds (pF) | 318 15V |
Typical Rise Time (ns) | 2.6 |
Typical Turn-Off Delay Time (ns) | 17 |
Typical Turn-On Delay Time (ns) | 1.6 |
Maximum Continuous Drain Current | 4.6 A |
Maximum Drain Source Resistance | 65 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 3V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.4 W |
Minimum Operating Temperature | -55 °C |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
Width | 1.4mm |
Техническая документация
Дополнительная информация
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