ALD212900PAL

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46 шт., срок 7-9 недель

1 900 руб.

Добавить в корзину 1 шт. на сумму 1 900 руб.

Альтернативные предложения1

Номенклатурный номер: 8006165002

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Arrays

Mosfet Array 2 N-Channel (Dual) согласованная пара 10,6 В 80 мА 500 мВт Сквозное отверстие 8-PDIP

California Prop 65	Warning Information
Current - Continuous Drain (Id) @ 25В°C	80mA
Drain to Source Voltage (Vdss)	10.6V
ECCN	EAR99
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual) Matched Pair
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 5V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	0В°C ~ 70В°C (TJ)
Package	Tube
Package / Case	8-DIP (0.300"", 7.62mm)
Power - Max	500mW
Rds On (Max) @ Id, Vgs	14Ohm
RoHS Status	ROHS3 Compliant
Series	EPADВ®, Zero Thresholdв„ў ->
Supplier Device Package	8-PDIP
Vgs(th) (Max) @ Id	20mV @ 20ВµA
Brand:	Advanced Linear Devices
Channel Mode:	Depletion
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	50
Id - Continuous Drain Current:	79 mA
Manufacturer:	Advanced Linear Devices
Maximum Operating Temperature:	+70 C
Minimum Operating Temperature:	0 C
Mounting Style:	Through Hole
Number of Channels:	2 Channel
Package / Case:	PDIP-8
Packaging:	Tube
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	14 Ohms
Series:	ALD212900P
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	10 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	20 mV
Вес, г	8