2N2857 PBFREE

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Номенклатурный номер: 8006171020

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - RF

РЧ транзистор NPN 15V 40mA 1.9GHz 200mW Through Hole TO-72

Current - Collector (Ic) (Max)	40mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 3mA, 1V
ECCN	EAR99
Frequency - Transition	1.9GHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Noise Figure (dB Typ @ f)	4.5dB @ 450MHz
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-206AF, TO-72-4 Metal Can
Power - Max	200mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-72
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	30 V
Collector- Emitter Voltage VCEO Max:	15 V
Configuration:	Single
Continuous Collector Current:	40 mA
DC Collector/Base Gain hfe Min:	30
DC Current Gain hFE Max:	150
Emitter- Base Voltage VEBO:	2.5 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	1.9 GHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	40 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-72
Packaging:	Bulk
Pd - Power Dissipation:	200 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN