SI6913DQ-T1-E3, MOSFET -12V Vds 8V Vgs TSSOP-8

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Номенклатурный номер: 8006213662

Артикул: SI6913DQ-T1-E3

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Trans MOSFET P-CH 12V 4.9A 8-Pin TSSOP T/R

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	5.8 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	TSSOP-8
Part # Aliases:	SI6913DQ-T1
Pd - Power Dissipation:	1.14 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	28 nC
Rds On - Drain-Source Resistance:	21 mOhms
Series:	SI6
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Dual Dual Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	4.9
Maximum Drain Source Resistance (mOhm)	21@4.5V
Maximum Drain Source Voltage (V)	12
Maximum Gate Source Voltage (V)	±8
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1140
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOP
Supplier Package	TSSOP
Typical Fall Time (ns)	80
Typical Gate Charge @ Vgs (nC)	18.5@4.5V
Typical Rise Time (ns)	80
Typical Turn-Off Delay Time (ns)	130
Typical Turn-On Delay Time (ns)	45
Вес, г	0.16