2SAR522MT2L, Bipolar Transistors - BJT PNP General Purpose Amplification Transistor
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7990 шт., срок 7-9 недель
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
2Sx Bipolar Junction TransistorsROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 20 V |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 120 mV |
| Configuration: | Single |
| Continuous Collector Current: | -200 mA |
| DC Collector/Base Gain hfe Min: | 120 |
| DC Current Gain hFE Max: | 560 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 8000 |
| Gain Bandwidth Product fT: | 350 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-723-3 |
| Part # Aliases: | 2SAR522M |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2SAR522M |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 1 |
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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