SFH 314 FA, Phototransistors PHOTOTRANSISTOR

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5374 шт., срок 7-9 недель

230 руб.

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Номенклатурный номер: 8006411411

Артикул: SFH 314 FA

Optoelectronics\Optical Detectors and Sensors\Phototransistors

This family of NPN silicon phototransistors, from OSRAM Opto Semiconductors, are a range of 5mm (T-1 3/4) through-hole devices.

Brand:	ams OSRAM
Collector- Emitter Voltage VCEO Max:	70 V
Collector-Emitter Breakdown Voltage:	70 V
Collector-Emitter Saturation Voltage:	150 mV
Dark Current:	200 nA
Factory Pack Quantity: Factory Pack Quantity:	1000
Half Intensity Angle Degrees:	40 deg
Lens Color/Style:	Black
Light Current:	2.5 mA
Manufacturer:	ams OSRAM
Maximum On-State Collector Current:	50 mA
Maximum Operating Temperature:	+100 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	T-1 3/4
Packaging:	Bulk
Part # Aliases:	Q62702P1675 Q62702P1675
Pd - Power Dissipation:	200 mW
Peak Wavelength:	870 nm
Product Category:	Phototransistors
Product Type:	Phototransistors
Product:	Phototransistors
Qualification:	AEC-Q101
Subcategory:	Optical Detectors and Sensors
Type:	Silicon NPN Phototransistor
Wavelength:	870 nm
Angle of Half Sensitivity	80 °
Collector Current	50mA
Maximum Dark Current	200nA
Maximum Wavelength Detected	1080nm
Minimum Wavelength Detected	740nm
Mounting Type	Through Hole
Number of Channels	1
Number of Pins	2
Package Type	5mm(T-1 3/4)
Polarity	NPN
Spectral Range of Sensitivity	740 → 1080 nm
Spectrums Detected	Infrared
Typical Fall Time	14µs
Typical Rise Time	14µs
Width	5.9mm
Количество Выводов	2вывод(-ов)
Стиль Корпуса Транзистора	Radial Leaded
Типичное Значение Длины Волны	870нм
Угол Обзора	80°
Энергопотребление	200мВт
Вес, г	0.3