BPW76A, Phototransistors TO-18 450-1080nm +/-40 deg
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Описание
Фототранзисторы 850нм, вид сверху TO-206AA, TO-18-3 Metal Can
Технические параметры
| Base Product Number | BPW76 -> |
| Current - Collector (Ic) (Max) | 50mA |
| Current - Dark (Id) (Max) | 100nA |
| ECCN | EAR99 |
| HTSUS | 8541.40.7080 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 125В°C (TA) |
| Orientation | Top View |
| Package | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Power - Max | 250mW |
| RoHS Status | ROHS3 Compliant |
| Viewing Angle | 80В° |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| Wavelength | 850nm |
| Angle of Half Sensitivity | ±40 ° |
| Collector Current | 50mA |
| Diameter | 4.7mm |
| Maximum Dark Current | 100nA |
| Maximum Light Current | 800µA |
| Maximum Wavelength Detected | 1080nm |
| Minimum Wavelength Detected | 450nm |
| Number of Channels | 1 |
| Number of Pins | 3 |
| Package Type | TO-18 |
| Polarity | NPN |
| Spectral Range of Sensitivity | 450 → 1080 nm |
| Spectrums Detected | Infrared, Visible Light |
| Typical Fall Time | 5µs |
| Typical Rise Time | 6µs |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 80 |
| Lead Shape | Through Hole |
| Lens Shape Type | Flat |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Maximum Dark Current (nA) | 100 |
| Maximum Light Current (uA) | 800 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Power Dissipation (mW) | 250 |
| Mounting | Through Hole |
| Number of Channels per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Peak Wavelength (nm) | 850 |
| Phototransistor Type | Phototransistor |
| Pin Count | 3 |
| PPAP | No |
| Standard Package Name | TO |
| Supplier Package | TO-206AA |
| Type | Chip |
| Viewing Orientation | Top View |
