2SC6100,LF

Изображения служат только для ознакомления,
см. техническую документацию

42341 шт., срок 7-9 недель

170 руб.

Добавить в корзину 1 шт. на сумму 170 руб.

Альтернативные предложения1

Номенклатурный номер: 8006653027

Бренд: Toshiba

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор NPN 50V 2.5A 500mW UFM для поверхностного монтажа

Base Product Number	RN1101 ->
Current - Collector (Ic) (Max)	2.5A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	400 @ 300mA, 2V
ECCN	EAR99
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	3-SMD, Flat Lead
Power - Max	500mW
RoHS Status	RoHS non-compliant
Supplier Device Package	UFM
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	140mV @ 20mA, 1A
Voltage - Collector Emitter Breakdown (Max)	50V
Brand:	Toshiba
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	140 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Manufacturer:	Toshiba
Maximum DC Collector Current:	2.5 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	800 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN