2SC4738-GR,LF

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5645 шт., срок 6-8 недель

59 руб.

Мин. кол-во для заказа 3 шт.

Добавить в корзину 3 шт. на сумму 177 руб.

Номенклатурный номер: 8006760420

Бренд: Toshiba

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор NPN 50 В 150 мА 80 МГц 100 мВт SSM для поверхностного монтажа

Base Product Number	TC7WZ08 ->
Current - Collector (Ic) (Max)	150mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
ECCN	EAR99
Frequency - Transition	80MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	125В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SC-75, SOT-416
Power - Max	100mW
RoHS Status	RoHS Compliant
Supplier Device Package	SSM
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand:	Toshiba
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	100 mV
Configuration:	Single
DC Collector/Base Gain hFE Min:	120
DC Current Gain hFE Max:	700 at 2 mA, 6 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	80 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	150 mA
Maximum Operating Temperature:	+125 C
Mounting Style:	SMD/SMT
Package/Case:	SC-75-3
Pd - Power Dissipation:	100 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN