TPH5200FNH.L1Q

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4 шт. со склада г.Москва, срок 8-9 дней

870 руб.

Добавить в корзину 1 шт. на сумму 870 руб.

Альтернативные предложения1

Номенклатурный номер: 8007272834

Бренд: Toshiba

Электроэлемент

Trans MOSFET N-CH 250V 27A 8-Pin SOP Advanced

Current - Continuous Drain (Id) @ 25В°C	26A(Tc)
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 100V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Operating Temperature	150В°C(TJ)
Package / Case	8-PowerVDFN
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	78W(Tc)
Rds On (Max) @ Id, Vgs	52 mOhm @ 13A, 10V
Series	U-MOSVIII-H
Supplier Device Package	8-SOP Advance(5x5)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 1mA
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	12 ns
Id - Continuous Drain Current:	26 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOP-8
Pd - Power Dissipation:	78 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	22 nC
Rds On - Drain-Source Resistance:	44 mOhms
Rise Time:	8 ns
Series:	TPH5200FNH
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSVIII-H
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V

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