RD3G600GNTL

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7 шт. со склада г.Москва, срок 8-9 дней

680 руб.

от 2 шт. — 570 руб.

от 5 шт. — 496 руб.

от 7 шт. — 472.50 руб.

Добавить в корзину 1 шт. на сумму 680 руб.

Альтернативные предложения2

Номенклатурный номер: 8007314072

Бренд: Rohm

Электроэлемент

MOSFET RD3G600GN is a power MOSFET with low-on resistance and High power package (TO-252), suitable for switching.

Channel Mode	Enhancement
Continuous Drain Current	60(A)
Drain-Source On-Volt	40(V)
Gate-Source Voltage (Max)	±20(V)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	DPAK
Packaging	Tape and Reel
Pin Count	2+Tab
Polarity	N
Power Dissipation	40(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	20 ns
Id - Continuous Drain Current:	60 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TO-252-3
Packaging:	Reel, Cut Tape
Part # Aliases:	RD3G600GN
Pd - Power Dissipation:	40 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	46.5 nC
Rds On - Drain-Source Resistance:	3.6 mOhms
Rise Time:	11 ns
Series:	RD3G
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	11 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V