2SC3326-B,LF

Изображения служат только для ознакомления,
см. техническую документацию

199611 шт., срок 7-9 недель

130 руб.

Мин. кол-во для заказа 2 шт.

Добавить в корзину 2 шт. на сумму 260 руб.

Альтернативные предложения1

Номенклатурный номер: 8007362786

Бренд: Toshiba

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор NPN 20V 300mA 30MHz 150mW Surface Mount TO-236

Base Product Number	2SC2229 ->
Current - Collector (Ic) (Max)	300mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	350 @ 4mA, 2V
ECCN	EAR99
Frequency - Transition	30MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	125В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	150mW
RoHS Status	RoHS Compliant
Supplier Device Package	TO-236
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max)	20V
Brand:	Toshiba
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	20 V
Collector-Emitter Saturation Voltage:	42 mV
Configuration:	Single
DC Collector/Base Gain hFE Min:	200
DC Current Gain hFE Max:	1200
Emitter- Base Voltage VEBO:	25 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	30 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	300 mA
Maximum Operating Temperature:	+125 C
Mounting Style:	SMD/SMT
Package/Case:	TO-236-3
Pd - Power Dissipation:	150 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.012