BSP126.115, Транзистор: N-MOSFET

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390 руб.

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Номенклатурный номер: 8007382938

Артикул: BSP126.115

Описание Транзистор: N-MOSFET, полевой, 250В, 0,375А, 1,5Вт, SOT223 Характеристики

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Id - Continuous Drain Current:	375 mA
Manufacturer:	Nexperia
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-223-3
Part # Aliases:	934000540115
Pd - Power Dissipation:	1.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	2.8 Ohms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	375 mA
Maximum Drain Source Resistance	5 Ω
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.5 W
Minimum Gate Threshold Voltage	0.8V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Width	3.7mm
Вес, кг	2.03