MRFE6VS25LR5

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см. техническую документацию

20 200 руб.

от 10 шт. — 16 720 руб.

от 25 шт. — 16 280 руб.

от 50 шт. — 16 273.62 руб.

Добавить в корзину 1 шт. на сумму 20 200 руб.

Номенклатурный номер: 8007534703

транз: PRF 25W 1.8 - 2000МГц, 50V , >25.9dB, >74%, LDMOS

Brand:	NXP Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Gain:	25.9 dB
Id - Continuous Drain Current:	210 mA
Manufacturer:	NXP
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-40 C
Mounting Style:	SMD/SMT
Operating Frequency:	1.8 MHz to 2000 MHz
Output Power:	25 W
Package / Case:	NI-360-2
Part # Aliases:	935320096178
Product Category:	RF MOSFET Transistors
Product Type:	RF MOSFET Transistors
Series:	MRFE6VS25N
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	LDMOS FET
Type:	RF Power MOSFET
Vds - Drain-Source Breakdown Voltage:	140 V
Vgs - Gate-Source Voltage:	10 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Current - Test	10mA
Family	Transistors-FETs, MOSFETs-RF
Frequency	512MHz
Gain	25.9dB
Manufacturer	NXP Semiconductors
Package / Case	NI-360
Packaging	Digi-Reel®
Part Status	Active
Power - Output	25W
Standard Package	1
Supplier Device Package	NI-360
Transistor Type	N-Channel
Voltage - Rated	133V
Voltage - Test	50V