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IPD60R210PFD7SAUMA1

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530 руб.

370 руб.

от 10 шт. — 290 руб.

от 100 шт. — 211 руб.

от 500 шт. — 177.39 руб.

Добавить в корзину 1 шт. на сумму 370 руб.

Номенклатурный номер: 8007576655

Бренд: INFINEON TECHNOLOGIES AG.

Описание

600V CoolMOS™ PFD7 SJ Power MOSFET
Infineon 600V CoolMOS™ PFD7 SJ Power MOSFETs are a revolutionary technology for high voltage power MOSFETs, designed according to the super-junction (SJ) principle and pioneered by Infineon. The latest CoolMOS™ PFD7 is an optimized platform tailored to target cost-sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets the highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Технические параметры

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	7 ns
Id - Continuous Drain Current:	16 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-40 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3-11
Packaging:	Reel, Cut Tape
Part # Aliases:	IPD60R210PFD7S SP003235792
Pd - Power Dissipation:	64 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	23 nC
Rds On - Drain-Source Resistance:	386 mOhms
Rise Time:	16 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	57 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Maximum Continuous Drain Current	42 A
Maximum Drain Source Voltage	650 V
Mounting Type	Surface Mount
Package Type	PG-TO252
Вес, г	270