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SSM6N44FE,LM

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89773 шт., срок 6-8 недель

130 руб.

Мин. кол-во для заказа 2 шт.

Добавить в корзину 2 шт. на сумму 260 руб.

Альтернативные предложения3

Номенклатурный номер: 8007712555

Бренд: Toshiba

Описание

π-MOS VI MOSFETs Toshiba -MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The -MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba -MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity:	4000
Id - Continuous Drain Current:	100 mA
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	ES6-6
Pd - Power Dissipation:	150 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	4 Ohms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	200 ns
Typical Turn-On Delay Time:	50 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V