SFH 313 FA-3/4, Phototransistors PHOTOTRANSISTOR
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Описание
Optoelectronics\Optical Detectors and Sensors\Phototransistors
This family of NPN silicon phototransistors, from OSRAM Opto Semiconductors, are a range of 5mm (T-1 3/4) through-hole devices.
Технические параметры
| Brand: | ams OSRAM |
| Collector- Emitter Voltage VCEO Max: | 70 V |
| Collector-Emitter Breakdown Voltage: | 70 V |
| Collector-Emitter Saturation Voltage: | 150 mV |
| Dark Current: | 200 nA |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 14 us |
| Half Intensity Angle Degrees: | 10 deg |
| Lens Color/Style: | Black |
| Light Current: | 6.3 mA |
| Manufacturer: | ams OSRAM |
| Maximum On-State Collector Current: | 50 mA |
| Maximum Operating Temperature: | +100 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | T-1 3/4 |
| Packaging: | Bulk |
| Part # Aliases: | Q62702P5196 Q62702P5196 |
| Pd - Power Dissipation: | 200 mW |
| Peak Wavelength: | 870 nm |
| Product Category: | Phototransistors |
| Product Type: | Phototransistors |
| Product: | Phototransistors |
| Rise Time: | 14 us |
| Subcategory: | Optical Detectors and Sensors |
| Type: | Silicon NPN Phototransistor |
| Wavelength: | 870 nm |
| Angle of Half Sensitivity | 20 ° |
| Collector Current | 50mA |
| Maximum Dark Current | 200nA |
| Maximum Light Current | 12500µA |
| Maximum Wavelength Detected | 1080nm |
| Minimum Wavelength Detected | 740nm |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Package Type | 5mm(T-1 3/4) |
| Polarity | NPN |
| Spectral Range of Sensitivity | 740 → 1080 nm |
| Spectrums Detected | Infrared |
| Typical Fall Time | 14µs |
| Typical Rise Time | 14µs |
| Width | 5.9mm |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 1220 КБ
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