NX3008NBK.215
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см. техническую документацию
см. техническую документацию
5 руб.
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Альтернативные предложения5
Описание
Транзисторы
N-канал 30 В, 400 мА (Tc) 350 мВт (Ta), 1,14 Вт (Tc), поверхностный монтаж TO-236AB
Технические параметры
| Корпус | to236 | |
| кол-во в упаковке | 1 | |
| Base Product Number | NX3008 -> | |
| Current - Continuous Drain (Id) @ 25В°C | 400mA (Tc) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| ECCN | EAR99 | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V | |
| HTSUS | 8541.29.0095 | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Power Dissipation (Max) | 350mW (Ta), 1.14W (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 350mA, 4.5V | |
| REACH Status | REACH Unaffected | |
| RoHS Status | ROHS3 Compliant | |
| Series | Automotive, AEC-Q101, TrenchMOSв„ў -> | |
| Supplier Device Package | TO-236AB | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | В±8V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250ВµA | |
| Continuous Drain Current (Id) @ 25В°C | 400mA(Tc) | |
| Power Dissipation-Max (Ta=25В°C) | 1.14W(Tc) | |
| Rds On - Drain-Source Resistance | 1.4О© @ 350mA,4.5V | |
| Transistor Polarity | N Channel | |
| Vds - Drain-Source Breakdown Voltage | 30V | |
| Vgs - Gate-Source Voltage | 1.1V @ 250uA | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 400 mA | |
| Maximum Drain Source Resistance | 2.8 Ω | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 1.14 W | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Minimum Operating Temperature | -55 °C | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 0.52 nC @ 4.5 V | |
| Width | 1.4mm | |
| Вес, г | 0.035 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
