C3M0025065D

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см. техническую документацию

1 шт. со склада г.Москва, срок 9-10 дней

12 140 руб.

Добавить в корзину 1 шт. на сумму 12 140 руб.

Альтернативные предложения1

Номенклатурный номер: 8007978196

Электроэлемент

SiC, MOSFET, 25m¶, 650V, TO-247-3, Industrial, Gen 3

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Material	SiC
Maximum Continuous Drain Current (A)	97
Maximum Drain Source Resistance (mOhm)	34@15V
Maximum Drain Source Voltage (V)	650
Maximum Gate Source Leakage Current (nA)	250
Maximum Gate Source Voltage (V)	19
Maximum Gate Threshold Voltage (V)	3.6
Maximum IDSS (uA)	50
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	326000
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Number of Elements per Chip	1
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	C3M
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-247
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	12
Typical Gate Charge @ Vgs (nC)	108@15V
Typical Input Capacitance @ Vds (pF)	2980@600V
Typical Rise Time (ns)	60
Typical Turn-Off Delay Time (ns)	27
Typical Turn-On Delay Time (ns)	14
Вес, г	8.57