IRL3803PBF, MOSFET MOSFT 30V 120A 6mOhm 93.3nC LogLvAB

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630 руб.

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Номенклатурный номер: 8008263281

Артикул: IRL3803PBF

Описание Транзистор: N-MOSFET, полевой, 30В, 120А, 150Вт, TO220AB Характеристики

Current - Continuous Drain (Id) @ 25В°C	140A(Tc)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	140nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	5000pF @ 25V
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	200W(Tc)
Rds On (Max) @ Id, Vgs	6mOhm @ 71A, 10V
Series	HEXFETВ®
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±16V
Vgs(th) (Max) @ Id	1V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	140 A
Maximum Drain Source Resistance	6 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Gate Threshold Voltage	1V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	200 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	140 nC @ 4.5 V
Вес, г	1