TPHR6503PL1,LQ, MOSFET UMOS9 SOP-ADV(N) RDSon=0.65mohm(max)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
43094 шт., срок 7-9 недель
640 руб.
Добавить в корзину 1 шт.
на сумму 640 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Automotive U-MOSIX-H Power MOSFETsToshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation"s previous series (U-MOSIV).
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 10 ns |
| Id - Continuous Drain Current: | 420 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +175 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOP-8 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | TPHR6503PL1, LQ(M |
| Pd - Power Dissipation: | 210 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 110 nC |
| Rds On - Drain-Source Resistance: | 410 uOhms |
| Rise Time: | 12 ns |
| Series: | UMOS IX-H |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 100 ns |
| Typical Turn-On Delay Time: | 36 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 588 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
