FDMS5352

Изображения служат только для ознакомления,
см. техническую документацию

880 руб.

от 10 шт. — 680 руб.

от 100 шт. — 480 руб.

от 500 шт. — 397.02 руб.

Добавить в корзину 1 шт. на сумму 880 руб.

Номенклатурный номер: 8008458316

Power Field-Effect Transistor, 13.6A, 60V, 0.0067ohm, N-Channel, MOSFET

Channel Mode	Enhancement
Continuous Drain Current	13.6(A)
Drain-Source On-Volt	60(V)
Gate-Source Voltage (Max)	'±20(V)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	PQFN EP
Packaging	Tape and Reel
Pin Count	8
Polarity	N
Power Dissipation	2.5(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	7 ns
Id - Continuous Drain Current:	13.6 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	Power-56-8
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	131 nC
Rds On - Drain-Source Resistance:	6.7 mOhms
Rise Time:	11 ns
Series:	FDMS5352
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	19 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V