BSO201SPHXUMA1

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500 руб.

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Номенклатурный номер: 8008680647

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances.

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	162 ns
Forward Transconductance - Min:	40 S
Id - Continuous Drain Current:	14.9 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOIC-8
Part # Aliases:	BSO201SP H SP000613828
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	66 nC
Rds On - Drain-Source Resistance:	10.3 mOhms
Rise Time:	99 ns
Series:	BSO201
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	99 ns
Typical Turn-On Delay Time:	21 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	14.9 A
Maximum Drain Source Resistance	12.9 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Gate Threshold Voltage	1.2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	0.6V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	OptiMOS P
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	66 nC @ 4.5 V
Width	4mm