W958D8NBYA5I TR

W958D8NBYA5I TR
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см. техническую документацию
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Номенклатурный номер: 8008819739

Описание

Low Power HyperRAM®

Winbond Low Power HyperRAM ® is mobile DRAM with a high-speed SDRAM device internally configured as an 8-bank memory and uses a Double Data Rate (DDR) architecture on the Command/Address (CA) bus. This HyperRAM features low pin count, low power consumption, and easy control to improve the performance of end devices. The new IoT edge devices and human-machine interface devices require new functionality in terms of size, power consumption, and performance. These HyperRAM memory devices provide new technical solutions and address the rapid rise of new IoT edge devices and human-machine interface devices. These HyperRAMs offer 45mW power at 1.8V in hybrid sleep mode which is significantly different from the standby mode of SDRAM. The HyperRAM supports the HyperBus interface and is a solution to address the rapid rise of automotive electronics, industrial 4.0, and smart home applications.

Технические параметры

Brand: Winbond
Data Bus Width: 8 bit
Factory Pack Quantity: Factory Pack Quantity: 2000
Manufacturer: Winbond
Maximum Clock Frequency: 200 MHz
Maximum Operating Temperature: +85 C
Memory Size: 256 Mbit
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organization: 32 M x 8
Packaging: Reel, Cut Tape
Product Category: DRAM
Product Type: DRAM
Subcategory: Memory & Data Storage
Supply Voltage - Max: 1.95 V
Supply Voltage - Min: 1.7 V
Type: HyperRAM

Техническая документация

Datasheet
pdf, 769 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем

Сроки доставки

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