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Описание
Low Power HyperRAM®
Winbond Low Power HyperRAM ® is mobile DRAM with a high-speed SDRAM device internally configured as an 8-bank memory and uses a Double Data Rate (DDR) architecture on the Command/Address (CA) bus. This HyperRAM features low pin count, low power consumption, and easy control to improve the performance of end devices. The new IoT edge devices and human-machine interface devices require new functionality in terms of size, power consumption, and performance. These HyperRAM memory devices provide new technical solutions and address the rapid rise of new IoT edge devices and human-machine interface devices. These HyperRAMs offer 45mW power at 1.8V in hybrid sleep mode which is significantly different from the standby mode of SDRAM. The HyperRAM supports the HyperBus interface and is a solution to address the rapid rise of automotive electronics, industrial 4.0, and smart home applications.
Winbond Low Power HyperRAM ® is mobile DRAM with a high-speed SDRAM device internally configured as an 8-bank memory and uses a Double Data Rate (DDR) architecture on the Command/Address (CA) bus. This HyperRAM features low pin count, low power consumption, and easy control to improve the performance of end devices. The new IoT edge devices and human-machine interface devices require new functionality in terms of size, power consumption, and performance. These HyperRAM memory devices provide new technical solutions and address the rapid rise of new IoT edge devices and human-machine interface devices. These HyperRAMs offer 45mW power at 1.8V in hybrid sleep mode which is significantly different from the standby mode of SDRAM. The HyperRAM supports the HyperBus interface and is a solution to address the rapid rise of automotive electronics, industrial 4.0, and smart home applications.
Технические параметры
Brand: | Winbond |
Data Bus Width: | 8 bit |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Manufacturer: | Winbond |
Maximum Clock Frequency: | 200 MHz |
Maximum Operating Temperature: | +85 C |
Memory Size: | 256 Mbit |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 32 M x 8 |
Packaging: | Reel, Cut Tape |
Product Category: | DRAM |
Product Type: | DRAM |
Subcategory: | Memory & Data Storage |
Supply Voltage - Max: | 1.95 V |
Supply Voltage - Min: | 1.7 V |
Type: | HyperRAM |
Техническая документация
Datasheet
pdf, 769 КБ
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
Сроки доставки
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