Главная › Электронные компоненты › Транзисторы › Полевые с управляющим PN-переходом (JFETs) › Diodes › BSS127S-7

BSS127S-7

Изображения служат только для ознакомления,
см. техническую документацию

140 руб.

Мин. кол-во для заказа 2 шт.

от 10 шт. — 96 руб.

от 100 шт. — 45 руб.

от 500 шт. — 36.81 руб.

Добавить в корзину 2 шт. на сумму 280 руб.

Альтернативные предложения1

Номенклатурный номер: 8008824471

Бренд: DIODES INC.

Описание

Описание Транзистор N-MOSFET, полевой, 600В, 0,07А, 0,61/1,25Вт, SOT23 Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Package Width	1.3
Package Length	2.9
Lead Shape	Gull-wing
Package Height	0.98
Maximum Positive Gate Source Voltage (V)	20
Mounting	Surface Mount
PCB changed	3
Maximum Diode Forward Voltage (V)	1.5
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±20
Operating Junction Temperature (°C)	-55 to 150
Maximum Gate Threshold Voltage (V)	4.5
Maximum Continuous Drain Current (A)	0.07
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	0.1
Maximum Drain Source Resistance (mOhm)	160000@10V
Typical Gate Charge @ Vgs (nC)	1.08@10V
Typical Gate Charge @ 10V (nC)	1.08
Typical Input Capacitance @ Vds (pF)	21.8@25V
Maximum Power Dissipation (mW)	1250
Typical Fall Time (ns)	168
Typical Rise Time (ns)	7.2
Typical Turn-Off Delay Time (ns)	28.7
Typical Turn-On Delay Time (ns)	5
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel
Automotive	No
Standard Package Name	SOT
Supplier Package	SOT-23
Pin Count	3
Military	No
Brand	Diodes Incorporated
Factory Pack Quantity	3000
Fall Time	168 ns
Id - Continuous Drain Current	70 mA
Manufacturer	Diodes Incorporated
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	1 Channel
Package / Case	SOT-23-3
Pd - Power Dissipation	1.25 W
Product Type	MOSFET
Rds On - Drain-Source Resistance	160 Ohms
Rise Time	7.2 ns
Series	BSS127
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	28.7 ns
Typical Turn-On Delay Time	5 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	3 V
Maximum Continuous Drain Current	70 mA
Maximum Drain Source Resistance	190 Ω
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4.5V
Maximum Power Dissipation	1.25 W
Mounting Type	Surface Mount
Package Type	SOT-23
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	1.08 nC @ 10 V
Width	1.4mm
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	168 ns
Id - Continuous Drain Current:	70 mA
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Pd - Power Dissipation:	1.25 W
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	160 Ohms
Rise Time:	7.2 ns
Series:	BSS127
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28.7 ns
Typical Turn-On Delay Time:	5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V