XPN7R104NC,L1XHQ, MOSFET 65W 1MHz Automotive; AEC-Q101
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Automotive U-MOSVIII-H Power MOSFETsToshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 13 ns |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +175 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TSON-Advance-8 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | XPN7R104NC, L1XHQ(O |
| Pd - Power Dissipation: | 65 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 21 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 7.1 mOhms |
| Rise Time: | 5.5 ns |
| Series: | U-MOSVIII-H |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 570 КБ
Дополнительная информация
Калькуляторы группы «Усилители – Инструментальные, Операционные, Буферные»
Типы корпусов импортных микросхем
Сроки доставки
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