CSD19503KCS
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
670 руб.
от 2 шт. —
560 руб.
от 5 шт. —
478 руб.
от 10 шт. —
443.75 руб.
Добавить в корзину 1 шт.
на сумму 670 руб.
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 80В, 100А, 188Вт, TO220-3 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 2 ns |
| Forward Transconductance - Min | 110 S |
| Height | 16.51 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 10.67 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 188 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 28 nC |
| Rds On - Drain-Source Resistance | 9.2 mOhm |
| Rise Time | 3 ns |
| RoHS | Details |
| Series | CSD19503KCS |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 7 ns |
| Unit Weight | 0.211644 oz |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.8 V |
| Width | 4.7 mm |
| Base Product Number | CSD19503 -> |
| Current - Continuous Drain (Id) @ 25В°C | 100A (Ta) |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 40V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Power Dissipation (Max) | 188W (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 60A, 10V |
| REACH Status | REACH Affected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220-3 |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 250ВµA |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 450 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 110 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 188 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 28 nC |
| Rds On - Drain-Source Resistance: | 9.2 mOhms |
| Rise Time: | 3 ns |
| Series: | CSD19503KCS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Вес, г | 3.528 |
Техническая документация
Документация
pdf, 713 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
