BFP640H6327XTSA1

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170 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 120 руб.

от 10 шт. — 94 руб.

от 14 шт. — 86.11 руб.

Добавить в корзину 2 шт. на сумму 340 руб.

Номенклатурный номер: 8012902744

Электроэлемент

Описание Транзистор: NPN, биполярный, RF, 4,1В, 50мА, 0,2Вт, SOT343 Характеристики

AEC Qualified Number	AEC-Q101
Automotive	Yes
Maximum 3rd Order Intercept Point - (dBm)	26.5(Typ)
Maximum Collector Base Voltage - (V)	13
Maximum Collector-Emitter Voltage - (V)	4
Maximum DC Collector Current - (A)	0.05
Maximum Emitter Base Voltage - (V)	1.2
Maximum Noise Figure - (dB)	1.2(Typ)
Maximum Power 1dB Compression - (dBm)	13(Typ)
Maximum Power Dissipation - (mW)	200
Maximum Transition Frequency - (MHz)	40000(Typ)
Military	No
Minimum DC Current Gain	110@30mA@3V
Minimum DC Current Gain Range	50 to 120
Number of Elements per Chip	1
Operating Temperature - (??C)	-65~150
Operational Bias Conditions	3V/30mA
Packaging	Tape and Reel
Pin Count	4
Standard Package Name	SOT-343
Supplier Package	SOT-343
Typical Power Gain - (dB)	24
Case	SOT343
Collector current	50mA
Collector-emitter voltage	4.1V
Current gain	110…270
Frequency	42GHz
Kind of package	reel, tape
Kind of transistor	RF
Manufacturer	INFINEON TECHNOLOGIES
Mounting	SMD
Polarisation	bipolar
Power dissipation	0.2W
Technology	SiGe:C
Type of transistor	NPN
Maximum Collector Emitter Voltage	4.1 V
Maximum DC Collector Current	50 mA
Mounting Type	Surface Mount
Package Type	SOT-343
Transistor Type	NPN