APT33GF120BRG, Транзистор

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5 860 руб.

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Номенклатурный номер: 8013293424

Артикул: APT33GF120BRG

Trans IGBT Chip N-CH 1200V 52A 297000mW 3-Pin(3+Tab) TO-247 Tube

Current - Collector (Ic) (Max)	52A
Current - Collector Pulsed (Icm)	104A
Gate Charge	170nC
IGBT Type	NPT
Input Type	Standard
Manufacturer	Microsemi Corporation
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-247-3
Packaging	Tube
Part Status	Active
Power - Max	297W
Series	-
Supplier Device Package	TO-247(B)
Switching Energy	2.8mJ(on), 2.8mJ(off)
Td (on/off) @ 25В°C	25ns/210ns
Test Condition	-
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max)	1200V
Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.7 V
Configuration:	Single
Continuous Collector Current at 25 C:	52 A
Continuous Collector Current Ic Max:	52 A
Continuous Collector Current:	52 A
Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+150 C
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	297 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	1