TBC847B.LM
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
8855 шт. со склада г.Москва
6 руб.
Мин. кол-во для заказа 676 шт.
Добавить в корзину 676 шт.
на сумму 4 056 руб.
Альтернативные предложения5
Описание
Транзисторы и сборки биполярные
Описание Транзистор биполярный TO236
Технические параметры
| Корпус | to236 | |
| кол-во в упаковке | 1 | |
| Base Product Number | CUS10 -> | |
| Current - Collector (Ic) (Max) | 150mA | |
| Current - Collector Cutoff (Max) | 30nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | |
| ECCN | EAR99 | |
| Frequency - Transition | 100MHz | |
| HTSUS | 8541.21.0075 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Power - Max | 320mW | |
| RoHS Status | RoHS Compliant | |
| Supplier Device Package | SOT-23 | |
| Transistor Type | NPN | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 100mA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Brand | Toshiba | |
| Collector- Base Voltage VCBO | 60 V | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Collector-Emitter Saturation Voltage | 170 mV | |
| Configuration | Single | |
| Continuous Collector Current | 150 mA | |
| DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | |
| DC Current Gain hFE Max | 450 at 2 mA, 5 V | |
| Emitter- Base Voltage VEBO | 6 V | |
| Factory Pack Quantity | 3000 | |
| Gain Bandwidth Product fT | 100 MHz | |
| Manufacturer | Toshiba | |
| Maximum DC Collector Current | 150 mA | |
| Maximum Operating Temperature | +150 C | |
| Mounting Style | SMD/SMT | |
| Packaging | Reel | |
| Pd - Power Dissipation | 320 mW | |
| Product Category | Bipolar Transistors-BJT | |
| RoHS | Details | |
| Series | TBC8X7 | |
| Technology | Si | |
| Transistor Polarity | NPN | |
| Unit Weight | 0.000282 oz | |
| Automotive | No | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant | |
| Lead Shape | Gull-wing | |
| Material | Si | |
| Maximum Base Emitter Saturation Voltage (V) | 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA | |
| Maximum Collector Base Voltage (V) | 60 | |
| Maximum Collector Cut-Off Current (nA) | 30 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@5mA@100mA|0.2@0.5mA@10mA | |
| Maximum Collector-Emitter Voltage (V) | 50 | |
| Maximum DC Collector Current (A) | 0.15 | |
| Maximum Emitter Base Voltage (V) | 6 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 320 | |
| Maximum Transition Frequency (MHz) | 100(Min) | |
| Minimum DC Current Gain | 200@2mA@5V | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-23 | |
| Type | NPN | |
| Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 192 КБ
Datasheet TBC847B,LM
pdf, 188 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
