2N3019

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5 320 руб.

от 10 шт. — 4 370 руб.

от 25 шт. — 3 950 руб.

от 50 шт. — 3 891.55 руб.

Добавить в корзину 1 шт. на сумму 5 320 руб.

Номенклатурный номер: 8014039049

Биполярный (BJT) транзистор NPN 80V 1A 800mW Through Hole TO-5

Base Product Number	2N3019 ->
Current - Collector (Ic) (Max)	1A
Current - Collector Cutoff (Max)	10ВµA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V
ECCN	EAR99
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-205AA, TO-5-3 Metal Can
Power - Max	800mW
REACH Status	REACH Unaffected
RoHS Status	RoHS non-compliant
Supplier Device Package	TO-5
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	80V
Brand:	Microchip Technology
Collector- Base Voltage VCBO:	140 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	1 A
DC Collector/Base Gain hfe Min:	15
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1
Manufacturer:	Microchip
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-5-3
Packaging:	Bulk
Pd - Power Dissipation:	800 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN