FFSH3065A
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1 600 руб.
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1 460 руб.
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1 270 руб.
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1 092.70 руб.
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Описание
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
Технические параметры
| Diode Configuration | Single |
| Diode Technology | SiC Schottky |
| Diode Type | SiC Schottky |
| Maximum Continuous Forward Current | 30A |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Peak Non-Repetitive Forward Surge Current | 1.125kA |
| Peak Reverse Repetitive Voltage | 650V |
| Pin Count | 2 |
| Rectifier Type | Schottky Diode |
| Brand: | onsemi |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| If - Forward Current: | 30 A |
| Ifsm - Forward Surge Current: | 150 A |
| Ir - Reverse Current: | 200 uA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-2 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 259 W |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| REACH - SVHC: | Details |
| Series: | FFSH3065A |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Vf - Forward Voltage: | 1.5 V |
| Vr - Reverse Voltage: | 650 V |
| Vrrm - Repetitive Reverse Voltage: | 650 V |
Техническая документация
Datasheet
pdf, 371 КБ
