Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Microchip › SiC N-Channel MOSFET, 46 A, 1200 V ...

SiC N-Channel MOSFET, 46 A, 1200 V, 4-Pin TO-247-4 MSC040SMA120B4

Изображения служат только для ознакомления,
см. техническую документацию

8 860 руб.

Добавить в корзину 1 шт. на сумму 8 860 руб.

Номенклатурный номер: 8014587488

Артикул: MSC040SMA120B4

Бренд: Microchip Technology

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.

Технические параметры

Channel Type	N
Maximum Continuous Drain Current	46 A
Maximum Drain Source Voltage	1200 V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247-4
Pin Count	4
Transistor Material	SiC
Brand:	Microchip Technology
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	30
Id - Continuous Drain Current:	66 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-4
Packaging:	Tube
Pd - Power Dissipation:	323 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	137 nC
Rds On - Drain-Source Resistance:	40 mOhms
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	-10 V, +23 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Вес, г	1