SI7615ADN-T1-GE3, Биполярный транзистор P-канал 20В 35A 8-Pin 1212
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Описание
транзисторы биполярные импортные
Описание Транзистор: P-MOSFET, полевой, -20В, -35А, Idm: -80А, 33Вт Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 35 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 22.1 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Drain Source Resistance (mOhm) | 4.4 10V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Resistance (Ohm) | 4 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 81 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Power Dissipation (mW) | 3700 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 80 |
| Minimum Gate Resistance (Ohm) | 0.4 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | PowerPAK 1212 |
| Supplier Package | PowerPAK 1212 |
| Typical Diode Forward Voltage (V) | 0.72 |
| Typical Fall Time (ns) | 26 |
| Typical Gate Charge @ 10V (nC) | 122 |
| Typical Gate Charge @ Vgs (nC) | 59 4.5V|122 10V |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Gate to Drain Charge (nC) | 14.2 |
| Typical Gate to Source Charge (nC) | 9.1 |
| Typical Input Capacitance @ Vds (pF) | 5590 10V |
| Typical Output Capacitance (pF) | 640 |
| Typical Reverse Recovery Charge (nC) | 11 |
| Typical Reverse Recovery Time (ns) | 27 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 655 10V |
| Typical Rise Time (ns) | 40 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Typical Turn-On Delay Time (ns) | 41 |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Resistance | 9.8 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 52 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | PowerPAK 1212-8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 122 nC @ 10 V |
| Width | 3.4mm |
| Вес, г | 0.12 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
