IPB200N15N3GATMA1, N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1

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350 руб.

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Номенклатурный номер: 8015380098

Артикул: IPB200N15N3GATMA1

Semiconductors\Discrete Semiconductors\MOSFETs

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Resistance	20 mΩ
Maximum Drain Source Voltage	150 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	150 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	OptiMOS 3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	23 nC @ 10 V
Width	9.45mm
Transistor Material	Si
Вес, г	1