IRL630PBF, Транзистор: N-MOSFET, полевой, 200В, 5,7А, 74Вт, TO220AB
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
260 руб.
от 3 шт. —
220 руб.
Добавить в корзину 1 шт.
на сумму 260 руб.
Описание
Описание Транзистор: N-MOSFET, полевой, 200В, 5,7А, 74Вт, TO220AB Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 9A(Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 74W(Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| Series | - |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Resistance | 400 mΩ |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 74 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220AB |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Width | 4.7mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 9 |
| Maximum Drain Source Resistance (mOhm) | 400@5V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±10 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 74000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| PCB changed | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 33 |
| Typical Gate Charge @ 10V (nC) | 40(Max) |
| Typical Gate Charge @ Vgs (nC) | 40(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 1100@25V |
| Typical Rise Time (ns) | 57 |
| Typical Turn-Off Delay Time (ns) | 38 |
| Typical Turn-On Delay Time (ns) | 8 |
| Вес, г | 2.042 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 2275 КБ
Datasheet
pdf, 2059 КБ
Datasheet
pdf, 1164 КБ
Документация
pdf, 2279 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
