IRFP4137PBF, Транзистор: N-MOSFET, полевой, 300В, 38А, 341Вт, TO247AC

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1 150 руб.

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Номенклатурный номер: 8017538989

Артикул: IRFP4137PBF

Описание Транзистор: N-MOSFET, полевой, 300В, 38А, 341Вт, TO247AC Характеристики

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	38
Maximum Drain Source Resistance (MOhm)	69 10V
Maximum Drain Source Voltage (V)	300
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	5
Maximum IDSS (uA)	20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	341000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	HEXFET
Product Category	Power MOSFET
Standard Package Name	TO-247
Supplier Package	TO-247AC
Tab	Tab
Typical Fall Time (ns)	20
Typical Gate Charge @ 10V (nC)	83
Typical Gate Charge @ Vgs (nC)	83 10V
Typical Input Capacitance @ Vds (pF)	5168 50V
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	34
Typical Turn-On Delay Time (ns)	18
Maximum Continuous Drain Current - (A)	38
Maximum Drain Source Resistance - (mOhm)	69@10V
Maximum Drain Source Voltage - (V)	300
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	5
Maximum Power Dissipation - (mW)	341000
Military	No
Operating Temperature - (??C)	-55~175
Typical Gate Charge @ 10V - (nC)	83
Typical Gate Charge @ Vgs - (nC)	83@10V
Typical Input Capacitance @ Vds - (pF)	5168@50V
Вес, г	4.63