IRFH7084TRPBF, Транзистор: N-MOSFET, полевой, 40В, 40А, PQFN5X6

Изображения служат только для ознакомления,
см. техническую документацию

310 руб.

от 10 шт. — 210 руб.

от 30 шт. — 177 руб.

от 100 шт. — 151.56 руб.

Добавить в корзину 1 шт. на сумму 310 руб.

Номенклатурный номер: 8017539413

Артикул: IRFH7084TRPBF

Описание Транзистор: N-MOSFET, полевой, 40В, 40А, PQFN5X6 Характеристики

Brand:	Infineon/IR
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	34 ns
Forward Transconductance - Min:	120 S
Id - Continuous Drain Current:	265 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	PQFN-8
Part # Aliases:	IRFH7084TRPBF SP001551936
Pd - Power Dissipation:	156 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	127 nC
Rds On - Drain-Source Resistance:	950 uOhms
Rise Time:	31 ns
Subcategory:	MOSFETs
Technology:	Si
Tradename:	StrongIRFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3.9 V
Channel Type	N
Maximum Continuous Drain Current	265 A
Maximum Drain Source Voltage	40 V
Mounting Type	SMD
Package Type	PQFN
Вес, г	0.22