ZVN4310GTA, Транзистор N-MOSFET, полевой, 100В, 1,67А, 3Вт, SOT223

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310 руб.

от 10 шт. — 190 руб.

от 30 шт. — 157 руб.

от 100 шт. — 136.18 руб.

Добавить в корзину 1 шт. на сумму 310 руб.

Номенклатурный номер: 8017543688

Артикул: ZVN4310GTA

Бренд: DIODES INC.

Описание Транзистор N-MOSFET, полевой, 100В, 1,67А, 3Вт, SOT223 Характеристики

Continuous Drain Current (Id)	1.67A
Drain Source On Resistance (RDS(on)@Vgs,Id)	540mΩ@10V, 3.3A
Drain Source Voltage (Vdss)	100V
Gate Threshold Voltage (Vgs(th)@Id)	3V@1mA
Input Capacitance (Ciss@Vds)	350pF@25V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	3W
Type	N Channel
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	16 ns
Id - Continuous Drain Current:	1.67 A
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-223-3
Pd - Power Dissipation:	3 W
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	750 mOhms
REACH - SVHC:	Details
Rise Time:	25 ns
Series:	ZVN4310
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	FET
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.1