IXFH80N65X2, Транзистор N-MOSFET, X2-Class, полевой, 650В, 80А, 890Вт, TO247-3
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2 600 руб.
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2 140 руб.
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1 750 руб.
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Описание
HiPerFET™ Power MOSFETs
IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 36 S |
| Id - Continuous Drain Current: | 80 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 890 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 143 nC |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Rise Time: | 42 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 60 ns |
| Typical Turn-On Delay Time: | 40 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Вес, г | 6.15 |
Техническая документация
Datasheet
pdf, 884 КБ
