RGW80TS65CHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

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26 шт., срок 6 недель

5 330 руб.

Добавить в корзину 1 шт. на сумму 5 330 руб.

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Номенклатурный номер: 8017558993

Артикул: RGW80TS65CHRC11

Бренд: Rohm

Semiconductors\Discrete Semiconductors\IGBTs

The ROHM RGW series field stop trench IGBT suitable for automotive, on & off board computer, DC-DC converters, PFC, industrial inverter.

Channel Type	N
Configuration	Single
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	40 A
Maximum Gate Emitter Voltage	±30V
Maximum Power Dissipation	214 W
Mounting Type	Through Hole
Number of Transistors	1
Package Type	TO-247N
Pin Count	3
Transistor Configuration	Common Emitter
Collector Emitter Saturation Voltage	1.5В
Collector Emitter Voltage Max	650В
Continuous Collector Current	81А
Power Dissipation	214Вт
Количество Выводов	3вывод(-ов)
Максимальная Рабочая Температура	175°C
Монтаж транзистора	Through Hole
Стандарты Автомобильной Промышленности	AEC-Q101
Стиль Корпуса Транзистора	TO-247N
Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.5 V
Configuration:	Single
Continuous Collector Current at 25 C:	81 A
Factory Pack Quantity: Factory Pack Quantity:	30
Gate-Emitter Leakage Current:	200 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	TO-247N-3
Packaging:	Tube
Part # Aliases:	RGW80TS65CHR
Pd - Power Dissipation:	214 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	SiC
Вес, г	1