BSZ039N06NSATMA1, N-Channel MOSFET, 102 A, 60 V, 8-Pin PQFN 3 x 3 FL BSZ039N06NSATMA1

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Номенклатурный номер: 8018837775

Артикул: BSZ039N06NSATMA1

Semiconductors\Discrete Semiconductors\MOSFETs

The Infineon OptiMOS Power Transistor is a N channel MOSFET which is fully qualified according to JEDEC for Industrial Applications.

Channel Type	N
Maximum Continuous Drain Current	102 A
Maximum Drain Source Voltage	60 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PQFN 3x3 FL
Pin Count	8
Channel Mode	Enhancement
Continuous Drain Current	18(A)
Drain-Source On-Volt	60(V)
Gate-Source Voltage (Max)	20(V)
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Packaging	Tape and Reel
Polarity	N
Power Dissipation	2.1(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	6 ns
Forward Transconductance - Min:	27 S
Id - Continuous Drain Current:	40 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TSDSON-8
Packaging:	Reel, Cut Tape
Part # Aliases:	BSZ039N06NS SP002035226
Pd - Power Dissipation:	69 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	4.6 mOhms
Rise Time:	7 ns
Series:	BSZ039N06
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Вес, г	1